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Greg M. Yeric

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1993
1EEVictor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.: Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(3): 439-445 (1993)

Coauthor Index

1Victor Martin Agostinelli Jr. [1]
2A. F. Tasch Jr. [1]

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