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| 1993 | ||
|---|---|---|
| 1 | EE | Victor Martin Agostinelli Jr., Greg M. Yeric, A. F. Tasch Jr.: Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. on CAD of Integrated Circuits and Systems 12(3): 439-445 (1993) |
| 1 | Victor Martin Agostinelli Jr. | [1] |
| 2 | A. F. Tasch Jr. | [1] |