| 2005 |
|---|
| 6 | EE | A. M. Alcalde,
O. O. Diniz Neto,
G. E. Marques:
Spin-flip relaxation due to phonon macroscopic deformation potential in quantum dots.
Microelectronics Journal 36(11): 1034-1037 (2005) |
| 5 | EE | I. Camps,
A. Vercik,
Y. Galvão Gobato,
M. J. S. P. Brasil,
G. E. Marques,
S. S. Makler:
Negative charged excitons in double barrier diodes.
Microelectronics Journal 36(11): 1038-1040 (2005) |
| 4 | EE | A. M. Alcalde,
O. O. Diniz Neto,
G. E. Marques:
Spin relaxation due to the phonon modulation of the spin-orbit interaction in quantum dots.
Microelectronics Journal 36(3-6): 241-243 (2005) |
| 3 | EE | Y. Galvão Gobato,
M. J. S. P. Brasil,
I. Camps,
H. B. de Carvalho,
L. F. dos Santos,
G. E. Marques,
M. Henini,
L. Eaves,
G. Hill:
Charge buildup effects in asymmetric p-type resonant tunneling diodes.
Microelectronics Journal 36(3-6): 356-358 (2005) |
| 2 | EE | A. C. Bittencourt,
J. F. Estanislau,
G. E. Marques:
Spin-polarized charge fluctuations in magnetic tunneling diodes.
Microelectronics Journal 36(3-6): 463-465 (2005) |
| 1 | EE | G. E. Marques,
A. C. R. Bittencourt,
V. Lopez-Richard,
C. F. Destefani,
Sergio E. Ulloa:
Spin carrier dynamics under full spin-orbit coupling.
Microelectronics Journal 36(3-6): 480-483 (2005) |
