| |
| 2005 | ||
|---|---|---|
| 3 | EE | I. Camps, A. Vercik, Y. Galvão Gobato, M. J. S. P. Brasil, G. E. Marques, S. S. Makler: Negative charged excitons in double barrier diodes. Microelectronics Journal 36(11): 1038-1040 (2005) |
| 2003 | ||
| 2 | EE | A. Vercik, A. N. Faigon: Boltzmann transport equation based supply function for tunnelling from inversion layers. Microelectronics Journal 34(5-8): 533-535 (2003) |
| 1 | EE | A. Vercik, Y. Galvão Gobato, M. J. S. P. Brasil: Formation dynamics of neutral and negatively charged excitons in double barrier resonant tunnelling structures. Microelectronics Journal 34(5-8): 659-661 (2003) |
| 1 | M. J. S. P. Brasil | [1] [3] |
| 2 | I. Camps | [3] |
| 3 | A. N. Faigon | [2] |
| 4 | Y. Galvão Gobato | [1] [3] |
| 5 | S. S. Makler | [3] |
| 6 | G. E. Marques | [3] |