| 2005 |
|---|
| 3 | EE | I. Camps,
A. Vercik,
Y. Galvão Gobato,
M. J. S. P. Brasil,
G. E. Marques,
S. S. Makler:
Negative charged excitons in double barrier diodes.
Microelectronics Journal 36(11): 1038-1040 (2005) |
| 2 | EE | Y. Galvão Gobato,
M. J. S. P. Brasil,
I. Camps,
H. B. de Carvalho,
L. F. dos Santos,
G. E. Marques,
M. Henini,
L. Eaves,
G. Hill:
Charge buildup effects in asymmetric p-type resonant tunneling diodes.
Microelectronics Journal 36(3-6): 356-358 (2005) |
| 2003 |
|---|
| 1 | EE | A. Vercik,
Y. Galvão Gobato,
M. J. S. P. Brasil:
Formation dynamics of neutral and negatively charged excitons in double barrier resonant tunnelling structures.
Microelectronics Journal 34(5-8): 659-661 (2003) |
