2007 |
3 | EE | W. W. (Bill) Abadeer:
Effect of stress voltages on voltage acceleration and lifetime projections for ultra-thin gate oxides.
Microelectronics Reliability 47(2-3): 395-400 (2007) |
2003 |
2 | EE | Randy W. Mann,
W. W. (Bill) Abadeer,
Matthew J. Breitwisch,
O. Bula,
Jeff S. Brown,
Bryant C. Colwill,
Peter E. Cottrell,
William T. Crocco Jr.,
Stephen S. Furkay,
Michael J. Hauser,
Terence B. Hook,
Dennis Hoyniak,
James M. Johnson,
Chung Hon Lam,
Rebecca D. Mih,
J. Rivard,
Atsushi Moriwaki,
E. Phipps,
Christopher S. Putnam,
BethAnn Rainey,
James J. Toomey,
Mohammad Imran Younus:
Ultralow-power SRAM technology.
IBM Journal of Research and Development 47(5-6): 553-566 (2003) |
1999 |
1 | EE | W. W. (Bill) Abadeer,
Asmik Bagramian,
David W. Conkle,
Charles W. Griffin,
Eric Langlois,
Brian F. Lloyd,
Raymond P. Mallette,
James E. Massucco,
Jonathan M. McKenna,
Steven W. Mittl,
Philip H. Noel:
Key measurements of ultrathin gate dielectric reliability and in-line monitoring.
IBM Journal of Research and Development 43(3): 407-416 (1999) |