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| 2006 | ||
|---|---|---|
| 1 | EE | A. Szekeres, T. Nikolova, S. Simeonov, A. Gushterov, F. Hamelmann, U. Heinzmann: Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices. Microelectronics Journal 37(1): 64-70 (2006) |
| 1 | F. Hamelmann | [1] |
| 2 | U. Heinzmann | [1] |
| 3 | T. Nikolova | [1] |
| 4 | S. Simeonov | [1] |
| 5 | A. Szekeres | [1] |