| 2008 |
|---|
| 6 | EE | Katsunori Makihara,
Mitsuhisa Ikeda,
Seiichiro Higashi,
Seiichi Miyazaki:
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM.
IEICE Transactions 91-C(5): 712-715 (2008) |
| 2007 |
|---|
| 5 | EE | Yanli Pei,
Hideki Murakami,
Seiichiro Higashi,
Seiichi Miyazaki,
Seiji Inumiya,
Yasuo Nara:
Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors.
IEICE Transactions 90-C(5): 962-967 (2007) |
| 2005 |
|---|
| 4 | EE | Hideki Murakami,
Wataru Mizubayashi,
Hirokazu Yokoi,
Atsushi Suyama,
Seiichi Miyazaki:
Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation.
IEICE Transactions 88-C(4): 640-645 (2005) |
| 3 | EE | Hideki Murakami,
Yoshikazu Moriwaki,
Masafumi Fujitake,
Daisuke Azuma,
Seiichiro Higashi,
Seiichi Miyazaki:
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate.
IEICE Transactions 88-C(4): 646-650 (2005) |
| 2 | EE | Katsunori Makihara,
Yoshihiro Okamoto,
Hideki Murakami,
Seiichiro Higashi,
Seiichi Miyazaki:
Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique.
IEICE Transactions 88-C(4): 705-708 (2005) |
| 1 | EE | Taku Shibaguchi,
Mitsuhisa Ikeda,
Hideki Murakami,
Seiichi Miyazaki:
Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots.
IEICE Transactions 88-C(4): 709-712 (2005) |
