| |
| 2002 | ||
|---|---|---|
| 1 | EE | A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa: Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection. Microelectronics Reliability 42(9-11): 1461-1464 (2002) |
| 1 | V. S. Lysenko | [1] |
| 2 | A. N. Nazarov | [1] |
| 3 | I. N. Osiyuk | [1] |
| 4 | L. Rebohle | [1] |
| 5 | W. Skorupa | [1] |