R.-P. Vollertsen

2004
2	EE	R.-P. Vollertsen, E. Y. Wu: Voltage acceleration and t63.2 of 1.6-10 nm gate oxides. Microelectronics Reliability 44(6): 909-916 (2004)
2003
1	EE	R.-P. Vollertsen: Thin dielectric reliability assessment for DRAM technology with deep trench storage node. Microelectronics Reliability 43(6): 865-878 (2003)

Coauthor Index

1

E. Y. Wu

[2]