| |
| 1989 | ||
|---|---|---|
| 3 | EE | Robert Anholt, Thomas W. Sigmon: A process and device model for GaAs MESFET technology: GATES. IEEE Trans. on CAD of Integrated Circuits and Systems 8(4): 350-359 (1989) |
| 2 | EE | Michael D. Deal, S. E. Hansen, Thomas W. Sigmon: SUPREM 3.5-process modeling of GaAs integrated circuit technology. IEEE Trans. on CAD of Integrated Circuits and Systems 8(9): 939-951 (1989) |
| 1988 | ||
| 1 | EE | Ettore Landi, Paul G. Carey, Thomas W. Sigmon: Numerical simulation of the gas immersion laser doping (GILD) process in silicon. IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 205-214 (1988) |
| 1 | Robert Anholt | [3] |
| 2 | Paul G. Carey | [1] |
| 3 | Michael D. Deal | [2] |
| 4 | S. E. Hansen | [2] |
| 5 | Ettore Landi | [1] |