Robert Anholt
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1989
1
EE
Robert Anholt,
Thomas W. Sigmon
: A process and device model for GaAs MESFET technology: GATES.
IEEE Trans. on CAD of Integrated Circuits and Systems 8
(4): 350-359 (1989)
Coauthor
Index
1
Thomas W. Sigmon
[
1
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Copyright ©
Sun May 17 03:24:02 2009 by
Michael Ley
(
ley@uni-trier.de
)
