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1988 | ||
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1 | EE | Ettore Landi, Paul G. Carey, Thomas W. Sigmon: Numerical simulation of the gas immersion laser doping (GILD) process in silicon. IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 205-214 (1988) |
1 | Ettore Landi | [1] |
2 | Thomas W. Sigmon | [1] |