| 2007 |
|---|
| 5 | EE | A. Pérez-Tomás,
M. R. Jennings,
M. Davis,
V. Shah,
T. Grasby,
J. A. Covington,
P. A. Mawby:
High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC.
Microelectronics Journal 38(12): 1233-1237 (2007) |
| 2006 |
|---|
| 4 | EE | L. Chen,
O. J. Guy,
D. Doneddu,
S. G. J. Batcup,
S. P. Wilks,
P. A. Mawby,
T. Bouchet,
F. Torregrosa:
Report on 4H-SiC JTE Schottky diodes.
Microelectronics Reliability 46(2-4): 637-640 (2006) |
| 2004 |
|---|
| 3 | EE | P. M. Igic,
M. S. Towers,
P. A. Mawby:
A 2D physically based compact model for advanced power bipolar devices.
Microelectronics Journal 35(7): 591-594 (2004) |
| 2002 |
|---|
| 2 | EE | P. M. Igic,
P. A. Mawby,
M. S. Towers,
W. Jamal,
S. G. J. Batcup:
Investigation of the power dissipation during IGBT turn-off using a new physics-based IGBT compact model.
Microelectronics Reliability 42(7): 1045-1052 (2002) |
| 2001 |
|---|
| 1 | EE | P. A. Mawby,
P. M. Igic,
M. S. Towers:
New physics-based compact electro-thermal model of power diode dedicated to circuit simulation.
ISCAS (3) 2001: 401-404 |
