2004 |
9 | EE | L. K. Teles,
M. Marques,
L. G. Ferreira,
L. M. R. Scolfaro,
J. R. Leite:
Phase separation, effects of biaxial strain, and ordered phase formations in cubic nitride alloys.
Microelectronics Journal 35(1): 53-57 (2004) |
8 | EE | J. R. L. Fernandez,
F. Cerdeira,
E. A. Meneses,
J. A. N. T. Soares,
O. C. Noriega,
J. R. Leite,
Donat Josef As,
U. Köhler,
D. G. P. Salazar,
D. Schikora:
Near band-edge optical properties of cubic GaN with and without carbon doping.
Microelectronics Journal 35(1): 73-77 (2004) |
7 | EE | H. Rodríguez-Coppola,
Joaquín Tutor-Sánchez,
J. R. Leite,
L. M. R. Scolfaro,
F. García-Moliner:
The absorption coefficient of low dimensional semiconductor systems: the photoluminescence of InGaN quantum dot.
Microelectronics Journal 35(2): 103-110 (2004) |
2003 |
6 | EE | T. A. S. Pereira,
J. A. K. Freire,
V. N. Freire,
G. A. Farias,
L. M. R. Scolfaro,
J. R. Leite,
E. F. da Silva Jr.:
Confined excitons in Si/SrTiO3 quantum wells.
Microelectronics Journal 34(5-8): 507-509 (2003) |
5 | EE | M. J. da Silva,
S. Martini,
T. E. Lamas,
A. A. Quivy,
E. C. F. da Silva,
J. R. Leite:
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum.
Microelectronics Journal 34(5-8): 631-633 (2003) |
4 | EE | L. S. Pereira,
A. M. Santos,
J. L. A. Alves,
H. W. Leite Alves,
J. R. Leite:
Dynamical and thermodynamic properties of III-nitrides.
Microelectronics Journal 34(5-8): 655-657 (2003) |
3 | EE | T. E. Lamas,
S. Martini,
M. J. da Silva,
A. A. Quivy,
J. R. Leite:
Morphological and optical properties of p-type GaAs(001) layers doped with silicon.
Microelectronics Journal 34(5-8): 701-703 (2003) |
2 | EE | F. V. de Sales,
Júnio Márcio Rosa Cruz,
Sebastião William da Silva,
M. A. G. Soler,
Paulo César de Morais,
M. J. da Silva,
A. A. Quivy,
J. R. Leite:
Coupled rate equation modeling of self-assembled quantum dot photoluminescence.
Microelectronics Journal 34(5-8): 705-707 (2003) |
1 | EE | C. de Oliveira,
J. L. A. Alves,
H. W. Leite Alves,
R. A. Nogueira,
J. R. Leite:
Atomic and electronic structures of InxGa1-xN quantum dots.
Microelectronics Journal 34(5-8): 725-727 (2003) |