| 2005 |
|---|
| 8 | EE | J. S. Soares,
H. W. Leite Alves:
Ab initio calculation of the SiC (100) surfaces phonon dispersion.
Microelectronics Journal 36(11): 1026-1028 (2005) |
| 7 | EE | A. P. Castro,
H. W. Leite Alves:
Ab initio study of the nitridation of the GaAs (100) surfaces.
Microelectronics Journal 36(11): 1045-1048 (2005) |
| 6 | EE | J. S. Soares,
H. W. Leite Alves:
Ab initio calculation of the structural and electronic properties of the SiC (100) Surfaces.
Microelectronics Journal 36(11): 998-1001 (2005) |
| 2003 |
|---|
| 5 | EE | F. L. de Almeida,
L. C. de Carvalho,
H. W. Leite Alves,
J. L. A. Alves:
Vibrational spectra of adsorbed hydrogen on GaN(001) surfaces.
Microelectronics Journal 34(5-8): 451-453 (2003) |
| 4 | EE | L. C. de Carvalho,
C. N. Dos Santos,
H. W. Leite Alves,
J. L. A. Alves:
Theoretical studies of poly(para-phenylene vinylene) (PPV) and poly(para-phenylene) (PPP).
Microelectronics Journal 34(5-8): 623-625 (2003) |
| 3 | EE | L. S. Pereira,
A. M. Santos,
J. L. A. Alves,
H. W. Leite Alves,
J. R. Leite:
Dynamical and thermodynamic properties of III-nitrides.
Microelectronics Journal 34(5-8): 655-657 (2003) |
| 2 | EE | E. Silva Pinto,
R. de Paiva,
L. C. de Carvalho,
H. W. Leite Alves,
J. L. A. Alves:
Theoretical optical parameters for III-nitride semiconductors.
Microelectronics Journal 34(5-8): 721-724 (2003) |
| 1 | EE | C. de Oliveira,
J. L. A. Alves,
H. W. Leite Alves,
R. A. Nogueira,
J. R. Leite:
Atomic and electronic structures of InxGa1-xN quantum dots.
Microelectronics Journal 34(5-8): 725-727 (2003) |
