2005 |
6 | EE | A. F. G. Monte,
J. F. R. Cunha,
M. A. P. Soler,
S. W. Silva,
A. A. Quivy,
Paulo César de Morais:
Optical and transport properties of InAs/GaAs quantum dots emitting at 1.3mum.
Microelectronics Journal 36(3-6): 194-196 (2005) |
5 | EE | S. L. Morelhão,
L. H. Avanci,
R. Freitas,
A. A. Quivy:
Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning.
Microelectronics Journal 36(3-6): 219-222 (2005) |
2003 |
4 | EE | M. J. da Silva,
S. Martini,
T. E. Lamas,
A. A. Quivy,
E. C. F. da Silva,
J. R. Leite:
Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3mum.
Microelectronics Journal 34(5-8): 631-633 (2003) |
3 | EE | S. L. Morelhão,
A. A. Quivy,
J. Härtwig:
Hybrid and effective satellites for studying superlattices.
Microelectronics Journal 34(5-8): 695-699 (2003) |
2 | EE | T. E. Lamas,
S. Martini,
M. J. da Silva,
A. A. Quivy,
J. R. Leite:
Morphological and optical properties of p-type GaAs(001) layers doped with silicon.
Microelectronics Journal 34(5-8): 701-703 (2003) |
1 | EE | F. V. de Sales,
Júnio Márcio Rosa Cruz,
Sebastião William da Silva,
M. A. G. Soler,
Paulo César de Morais,
M. J. da Silva,
A. A. Quivy,
J. R. Leite:
Coupled rate equation modeling of self-assembled quantum dot photoluminescence.
Microelectronics Journal 34(5-8): 705-707 (2003) |