| 2006 |
|---|
| 7 | EE | Dimitri A. Antoniadis,
Ingvar Aberg,
Cáit Ní Chléirigh,
Osama M. Nayfeh,
Ali Khakifirooz,
Judy L. Hoyt:
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations.
IBM Journal of Research and Development 50(4-5): 363-376 (2006) |
| 2002 |
|---|
| 6 | EE | Anthony Lochtefeld,
Ihsan J. Djomehri,
Ganesh Samudra,
Dimitri A. Antoniadis:
New insights into carrier transport in n-MOSFETs.
IBM Journal of Research and Development 46(2-3): 347-358 (2002) |
| 1997 |
|---|
| 5 | EE | Dimitri A. Antoniadis:
SOI CMOS as a mainstream low power technology: a critical assessment.
ISLPED 1997: 295-300 |
| 1996 |
|---|
| 4 | EE | Khalid Rahmat,
Jacob K. White,
Dimitri A. Antoniadis:
Simulation of semiconductor devices using a Galerkin/spherical harmonic expansion approach to solving the coupled Poisson-Boltzmann system.
IEEE Trans. on CAD of Integrated Circuits and Systems 15(10): 1181-1196 (1996) |
| 1993 |
|---|
| 3 | EE | Khalid Rahmat,
Jacob K. White,
Dimitri A. Antoniadis:
Computation of drain and substrate currents in ultra-short-channel nMOSFET's using the hydrodynamic model.
IEEE Trans. on CAD of Integrated Circuits and Systems 12(6): 817-824 (1993) |
| 1988 |
|---|
| 2 | EE | Thye-Lai Tung,
J. Connor,
Dimitri A. Antoniadis:
A boundary element method for modeling viscoelastic flow in thermal oxidation.
IEEE Trans. on CAD of Integrated Circuits and Systems 7(2): 215-224 (1988) |
| 1985 |
|---|
| 1 | EE | Thye-Lai Tung,
Dimitri A. Antoniadis:
A Boundary Integral Equation Approach to Oxidation Modeling.
IEEE Trans. on CAD of Integrated Circuits and Systems 4(4): 398-403 (1985) |
