| |
| 2006 | ||
|---|---|---|
| 1 | EE | Dimitri A. Antoniadis, Ingvar Aberg, Cáit Ní Chléirigh, Osama M. Nayfeh, Ali Khakifirooz, Judy L. Hoyt: Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. IBM Journal of Research and Development 50(4-5): 363-376 (2006) |
| 1 | Dimitri A. Antoniadis | [1] |
| 2 | Cáit Ní Chléirigh | [1] |
| 3 | Judy L. Hoyt | [1] |
| 4 | Ali Khakifirooz | [1] |
| 5 | Osama M. Nayfeh | [1] |