| |
| 2004 | ||
|---|---|---|
| 1 | EE | L. Yang, Asen Asenov, J. R. Watling, M. Boriçi, J. R. Barker, Scott Roy, K. Elgaid, I. Thayne, T. Hackbarth: Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability 44(7): 1101-1107 (2004) |
| 1 | Asen Asenov | [1] |
| 2 | J. R. Barker | [1] |
| 3 | M. Boriçi | [1] |
| 4 | K. Elgaid | [1] |
| 5 | T. Hackbarth | [1] |
| 6 | Scott Roy | [1] |
| 7 | I. Thayne | [1] |
| 8 | L. Yang | [1] |