2008 | ||
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2 | EE | Simone Raoux, Geoffrey W. Burr, Matthew J. Breitwisch, Charles T. Rettner, Yi-Chou Chen, Robert M. Shelby, Martin Salinga, Daniel Krebs, Shih-Hung Chen, Hsiang-Lan Lung, Chung Hon Lam: Phase-change random access memory: A scalable technology. IBM Journal of Research and Development 52(4-5): 465-480 (2008) |
1 | EE | Siegfried F. Karg, G. Ingmar Meijer, J. Georg Bednorz, Charles T. Rettner, Alejandro G. Schrott, Eric A. Joseph, Chung Hon Lam, Markus Janousch, Urs Staub, Fabio LaMattina, Santos F. Alvarado, Daniel Widmer, Richard Stutz, Ute Drechsler, Daniele Caimi: Transition-metal-oxide-based resistance-change memories. IBM Journal of Research and Development 52(4-5): 481-492 (2008) |
1 | Santos F. Alvarado | [1] |
2 | J. Georg Bednorz | [1] |
3 | Matthew J. Breitwisch | [2] |
4 | Geoffrey W. Burr | [2] |
5 | Daniele Caimi | [1] |
6 | Shih-Hung Chen | [2] |
7 | Yi-Chou Chen | [2] |
8 | Ute Drechsler | [1] |
9 | Markus Janousch | [1] |
10 | Eric A. Joseph | [1] |
11 | Siegfried F. Karg | [1] |
12 | Daniel Krebs | [2] |
13 | Fabio LaMattina | [1] |
14 | Chung Hon Lam | [1] [2] |
15 | Hsiang-Lan Lung | [2] |
16 | G. Ingmar Meijer | [1] |
17 | Simone Raoux | [2] |
18 | Martin Salinga | [2] |
19 | Alejandro G. Schrott | [1] |
20 | Robert M. Shelby | [2] |
21 | Urs Staub | [1] |
22 | Richard Stutz | [1] |
23 | Daniel Widmer | [1] |