| 2006 |
|---|
| 6 | EE | Hideaki Matsuzaki,
Takashi Maruyama,
Takatomo Enoki,
Masami Tokumitsu:
Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs.
IEICE Transactions 89-C(7): 949-953 (2006) |
| 5 | EE | Koji Inafune,
Eiichi Sano,
Hideaki Matsuzaki,
Toshihiko Kosugi,
Takatomo Enoki:
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs.
IEICE Transactions 89-C(7): 954-958 (2006) |
| 2004 |
|---|
| 4 | EE | Hideaki Matsuzaki,
Hiroki Sugiyama,
Haruki Yokoyama,
Takashi Kobayashi,
Takatomo Enoki:
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors.
IEICE Electronic Express 1(11): 292-297 (2004) |
| 3 | EE | Hideaki Matsuzaki,
Kimikazu Sano,
Takatomo Enoki:
Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors.
IEICE Electronic Express 1(2): 24-28 (2004) |
| 1999 |
|---|
| 2 | EE | Masafumi Yamamoto,
Hideaki Matsuzaki,
Toshihiro Itoh,
Takao Waho,
T. Akeyoshi,
J. Osaka:
Ultrahigh-Speed Circuits Using Resonant Tunneling Devices.
Great Lakes Symposium on VLSI 1999: 150-153 |
| 1 | EE | Hideaki Matsuzaki,
Toshihiro Itoh,
Masafumi Yamamoto:
A Novel High-Speed Flip-Flop Circuit Using RTDs and HEMTs.
Great Lakes Symposium on VLSI 1999: 154-157 |
