| |
| 2003 | ||
|---|---|---|
| 1 | EE | Chihoon Lee, Donggun Park, Hyeong Joon Kim, Wonshik Lee: Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide. Microelectronics Reliability 43(5): 735-739 (2003) |
| 1 | Hyeong Joon Kim | [1] |
| 2 | Chihoon Lee | [1] |
| 3 | Donggun Park | [1] |