2002 | ||
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1 | EE | Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim: The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. Microelectronics Reliability 42(3): 349-354 (2002) |
1 | Yongseok Ahn | [1] |
2 | Taeyoung Chung | [1] |
3 | Kinam Kim | [1] |
4 | Sanghyun Lee | [1] |