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| 2002 | ||
|---|---|---|
| 1 | EE | Anri Nakajima, Quazi D. M. Khosru, Takashi Yoshimoto, Shin Yokoyama: Atomic-layer-deposited silicon-nitride/SiO2 stack--a highly potential gate dielectrics for advanced CMOS technology. Microelectronics Reliability 42(12): 1823-1835 (2002) |
| 1 | Anri Nakajima | [1] |
| 2 | Shin Yokoyama | [1] |
| 3 | Takashi Yoshimoto | [1] |