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P. J. George

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2005
2EEA. Madan, S. C. Bose, P. J. George, Chandra Shekhar: Evaluation of Device Parameters of HfO2/SiO2/Si Gate Dielectric Stack for MOSFETs. VLSI Design 2005: 386-391
2001
1EEB. Prasad, P. J. George, Chandra Shekhar: High Frequency Behaviour Of Electron Transport In Silicon And Its Implication For Drain Conductance Of Mos Transistors. VLSI Design 2001: 491-494

Coauthor Index

1S. C. Bose [2]
2A. Madan [2]
3B. Prasad [1]
4Chandra Shekhar [1] [2]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)