2007 |
3 | EE | Hideaki Kurata,
Satoshi Noda,
Yoshitaka Sasago,
Kazuo Otsuga,
Tsuyoshi Arigane,
Tetsufumi Kawamura,
Takashi Kobayashi,
Hitoshi Kume,
Kazuki Homma,
Teruhiko Ito,
Yoshinori Sakamoto,
Masahiro Shimizu,
Yoshinori Ikeda,
Osamu Tsuchiya,
Kazunori Furusawa:
A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology.
IEICE Transactions 90-C(11): 2146-2156 (2007) |
2 | EE | Kazuo Otsuga,
Hideaki Kurata,
Satoshi Noda,
Yoshitaka Sasago,
Tsuyoshi Arigane,
Tetsufumi Kawamura,
Takashi Kobayashi:
Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories.
IEICE Transactions 90-C(4): 772-778 (2007) |
2006 |
1 | EE | Hideaki Kurata,
Shunichi Saeki,
Takashi Kobayashi,
Yoshitaka Sasago,
Tsuyoshi Arigane,
Keiichi Yoshida,
Yoshinori Takase,
Takayuki Yoshitake,
Osamu Tsuchiya,
Yoshinori Ikeda,
Shunichi Narumi,
Michitaro Kanamitsu,
Kazuto Izawa,
Kazunori Furusawa:
A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput.
IEICE Transactions 89-C(10): 1469-1479 (2006) |