| 2006 |
|---|
| 5 | EE | Kazuhiro Mochizuki,
Ken-ichi Tanaka,
Takashi Shiota,
Takafumi Taniguchi,
Hiroyuki Uchiyama:
Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation.
IEICE Transactions 89-C(7): 943-948 (2006) |
| 2005 |
|---|
| 4 | EE | Hiroyuki Uchiyama,
Takafumi Taniguchi,
Takeshi Kikawa:
Reduction of plasma-induced fluorine damage to P-HEMTs using x-ray emission.
IEICE Electronic Express 2(5): 143-148 (2005) |
| 2004 |
|---|
| 3 | EE | Hiroyuki Uchiyama,
Takafumi Taniguchi,
Makoto Kudo:
Suppression of plasma-induced fluorine damage in P-HEMTs using strained InSb barrier.
IEICE Electronic Express 1(16): 513-517 (2004) |
| 2 | EE | Hiroyuki Uchiyama,
Takafumi Taniguchi:
Plasma-Induced Fluorine Damage in P-HEMT Caused by C2F6/CHF3 RIE Plasma.
IEICE Electronic Express 1(2): 46-50 (2004) |
| 1 | EE | Hiroyuki Uchiyama,
Hiroshi Sato,
Kazunori Shinoda,
Akira Taike,
Takafumi Taniguchi,
Shinji Tsuji:
1.3-mu m InGaAlAs-BH laser with Cl2/N2 ECR plasma etched mesas.
IEICE Electronic Express 1(7): 193-197 (2004) |
