2006 | ||
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2 | EE | Ralf Siemieniec, H.-J. Schulze, F.-J. Niedernostheide, W. Südkamp, Josef Lutz: Compensation and doping effects in heavily helium-radiated silicon for power device applications. Microelectronics Journal 37(3): 204-212 (2006) |
2004 | ||
1 | EE | Ralf Siemieniec, Josef Lutz: Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes. Microelectronics Journal 35(3): 259-267 (2004) |
1 | Josef Lutz | [1] [2] |
2 | F.-J. Niedernostheide | [2] |
3 | H.-J. Schulze | [2] |
4 | W. Südkamp | [2] |