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2004 | ||
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1 | EE | Yang Rong, Jinsheng Luo, Tu Jing, Zhang Ruizhi: Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET. Microelectronics Journal 35(2): 145-149 (2004) |
1 | Tu Jing | [1] |
2 | Jinsheng Luo | [1] |
3 | Zhang Ruizhi | [1] |