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| 2004 | ||
|---|---|---|
| 1 | EE | Yang Rong, Jinsheng Luo, Tu Jing, Zhang Ruizhi: Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET. Microelectronics Journal 35(2): 145-149 (2004) |
| 1 | Jinsheng Luo | [1] |
| 2 | Yang Rong | [1] |
| 3 | Zhang Ruizhi | [1] |