2006 |
4 | EE | A. Rebey,
W. Fathallah,
B. El Jani:
In depth study of the compensation in annealed heavily carbon doped GaAs.
Microelectronics Journal 37(2): 158-166 (2006) |
2004 |
3 | EE | A. Rebey,
Z. Chine,
W. Fathallah,
B. El Jani,
E. Goovaerts,
S. Laugt:
Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs.
Microelectronics Journal 35(11): 875-880 (2004) |
2 | EE | A. Rebey,
M. M. Habchi,
Z. Benzarti,
B. El Jani:
Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry.
Microelectronics Journal 35(2): 179-184 (2004) |
2003 |
1 | EE | A. Bchetnia,
A. Rebey,
B. El Jani,
J. Cernogora,
J.-L. Fave:
New photoluminescence lines in Vanadium doped GaAs grown by MOVPE.
Microelectronics Journal 34(4): 271-274 (2003) |