| 2006 |
|---|
| 8 | EE | M. Souissi,
Z. Chine,
A. Bchetnia,
H. Touati,
B. El Jani:
Photoluminescence of V-doped GaN thin films grown by MOVPE technique.
Microelectronics Journal 37(1): 1-4 (2006) |
| 7 | EE | A. Rebey,
W. Fathallah,
B. El Jani:
In depth study of the compensation in annealed heavily carbon doped GaAs.
Microelectronics Journal 37(2): 158-166 (2006) |
| 6 | EE | C. Touzi,
F. Omnès,
T. Boufaden,
P. Gibart,
B. El Jani:
Realisation of 'Solar Blind' AlGaN Photodetectors: Measured and calculated spectral response.
Microelectronics Journal 37(4): 336-339 (2006) |
| 2004 |
|---|
| 5 | EE | A. Rebey,
Z. Chine,
W. Fathallah,
B. El Jani,
E. Goovaerts,
S. Laugt:
Comparative study between electrical, optical and structural properties of annealed heavily carbon doped GaAs.
Microelectronics Journal 35(11): 875-880 (2004) |
| 4 | EE | N. Chaaben,
T. Boufaden,
M. Christophersen,
B. El Jani:
Structural and optical characterization of GaN grown on porous silicon substrate by MOVPE.
Microelectronics Journal 35(11): 891-895 (2004) |
| 3 | EE | A. Rebey,
M. M. Habchi,
Z. Benzarti,
B. El Jani:
Study of GaAs layers grown on Ge substrates by MOVPE and in situ monitored by laser reflectometry.
Microelectronics Journal 35(2): 179-184 (2004) |
| 2003 |
|---|
| 2 | EE | A. Bchetnia,
A. Rebey,
B. El Jani,
J. Cernogora,
J.-L. Fave:
New photoluminescence lines in Vanadium doped GaAs grown by MOVPE.
Microelectronics Journal 34(4): 271-274 (2003) |
| 1 | EE | T. Boufaden,
N. Chaaben,
M. Christophersen,
B. El Jani:
GaN growth on porous silicon by MOVPE.
Microelectronics Journal 34(9): 843-848 (2003) |
