| |
| 2006 | ||
|---|---|---|
| 1 | EE | Ryuji Ohba, Daisuke Matsushita, Koichi Muraoka, Shinichi Yasuda, Tetsufumi Tanamoto, Ken Uchida, Shinobu Fujita: Si Nanocrystal MOSFET with Silicon Nitride Tunnel Insulator for High-rate Random Number Generation. ISVLSI 2006: 231-236 |
| 1 | Shinobu Fujita | [1] |
| 2 | Daisuke Matsushita | [1] |
| 3 | Ryuji Ohba | [1] |
| 4 | Tetsufumi Tanamoto | [1] |
| 5 | Ken Uchida | [1] |
| 6 | Shinichi Yasuda | [1] |