Satbir S. Madra
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2004
1
EE
Satbir S. Madra: Role of carrier depletion effects and material properties in advanced microscale thermal modeling of N-GaInP-Si/p-GaAs-C heterojunction bipolar transistor (HBT) devices.
Microelectronics Reliability 44
(7): 1061-1068 (2004)
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Sun May 17 03:24:02 2009 by
Michael Ley
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ley@uni-trier.de
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