| 2006 |
|---|
| 4 | EE | P. Hazdra,
V. Komarnitskyy:
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage.
Microelectronics Journal 37(3): 197-203 (2006) |
| 2004 |
|---|
| 3 | EE | P. Hazdra,
J. Vobecký,
H. Dorschner,
K. Brand:
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons.
Microelectronics Journal 35(3): 249-257 (2004) |
| 2003 |
|---|
| 2 | EE | J. Vobecký,
P. Hazdra,
V. Záhlava:
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode.
Microelectronics Reliability 43(4): 537-544 (2003) |
| 1 | EE | J. Vobecký,
P. Hazdra:
Advanced Local Lifetime Control for Higher Reliability of Power Devices.
Microelectronics Reliability 43(9-11): 1883-1888 (2003) |
