Y. L. Goh

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2004

1 EE Y. L. Goh, D. S. Ong: Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors. Microelectronics Reliability 44(7): 1199-1202 (2004)

2004
1	EE	Y. L. Goh, D. S. Ong: Analytical investigation of dead space effect under near-breakdown conditions in GaInP/GaAs composite double heterojunction bipolar transistors. Microelectronics Reliability 44(7): 1199-1202 (2004)

Coauthor Index

1 D. S. Ong [1]