| |
| 2006 | ||
|---|---|---|
| 1 | EE | M. Ossaimee, K. Kirah, W. Fikry, A. Girgis, O. A. Omar: Simplified quantitative stress-induced leakage current (SILC) model for MOS devices. Microelectronics Reliability 46(2-4): 287-292 (2006) |
| 1 | W. Fikry | [1] |
| 2 | K. Kirah | [1] |
| 3 | O. A. Omar | [1] |
| 4 | M. Ossaimee | [1] |