Boualem Djezzar
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2002
1
EE
Boualem Djezzar: On the correlation between radiation-induced oxide- and border-trap effects in the gate-oxide nMOSFET's.
Microelectronics Reliability 42
(12): 1865-1874 (2002)
Copyright ©
Sun May 17 03:24:02 2009 by
Michael Ley
(
ley@uni-trier.de
)