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1998 | ||
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2 | EE | Raymond S. Winton, William R. Bandy: A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET. IEEE Trans. on CAD of Integrated Circuits and Systems 17(7): 631-638 (1998) |
1996 | ||
1 | EE | William R. Bandy, Raymond S. Winton: A new approach for modeling the MOSFET using a simple, continuous analytical expression for drain conductance which includes velocity-saturation in a fundamental way. IEEE Trans. on CAD of Integrated Circuits and Systems 15(5): 475-483 (1996) |
1 | Raymond S. Winton | [1] [2] |