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William R. Bandy

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1998
2EERaymond S. Winton, William R. Bandy: A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET. IEEE Trans. on CAD of Integrated Circuits and Systems 17(7): 631-638 (1998)
1996
1EEWilliam R. Bandy, Raymond S. Winton: A new approach for modeling the MOSFET using a simple, continuous analytical expression for drain conductance which includes velocity-saturation in a fundamental way. IEEE Trans. on CAD of Integrated Circuits and Systems 15(5): 475-483 (1996)

Coauthor Index

1Raymond S. Winton [1] [2]

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