| |
| 2007 | ||
|---|---|---|
| 2 | EE | Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai: Determination of boron concentration in heavily doped p-type Si1-xGex/Si heterostructure by infrared ellipsometric spectroscopy. Microelectronics Journal 38(3): 392-397 (2007) |
| 1 | EE | Changchun Chen, Jiangfeng Liu, Benhai Yu, Qirun Dai: Investigation of Si/SiGe/Si heterostructure implanted by H ion and annealed in vacuum and dry O2 ambient. Microelectronics Journal 38(6-7): 800-804 (2007) |
| 1 | Changchun Chen | [1] [2] |
| 2 | Qirun Dai | [1] [2] |
| 3 | Benhai Yu | [1] [2] |