| 2007 |
|---|
| 8 | EE | Sona P. Kumar,
Anju Agrawal,
Rishu Chaujar,
Sneha Kabra,
Mridula Gupta,
R. S. Gupta:
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.
Microelectronics Journal 38(10-11): 1013-1020 (2007) |
| 7 | EE | Harsupreet Kaur,
Sneha Kabra,
Subhasis Haldar,
R. S. Gupta:
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET.
Microelectronics Journal 38(3): 352-359 (2007) |
| 6 | EE | Sneha Kabra,
Harsupreet Kaur,
Subhasis Haldar,
Mridula Gupta,
R. S. Gupta:
Two-dimensional subthreshold analysis of sub-micron GaN MESFET.
Microelectronics Journal 38(4-5): 547-555 (2007) |
| 5 | EE | Parvesh Gangwani,
Sujata Pandey,
Subhasis Haldar,
Mridula Gupta,
R. S. Gupta:
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications.
Microelectronics Journal 38(8-9): 848-854 (2007) |
| 2006 |
|---|
| 4 | EE | Sona P. Kumar,
Anju Agrawal,
Sneha Kabra,
Mridula Gupta,
R. S. Gupta:
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications.
Microelectronics Journal 37(11): 1339-1346 (2006) |
| 3 | EE | Sneha Kabra,
Harsupreet Kaur,
Ritesh Gupta,
Subhasis Haldar,
Mridula Gupta,
R. S. Gupta:
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications.
Microelectronics Journal 37(7): 620-626 (2006) |
| 2 | EE | Ritesh Gupta,
Sandeep k. Aggarwal,
Mridula Gupta,
R. S. Gupta:
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability.
Microelectronics Journal 37(9): 919-929 (2006) |
| 2003 |
|---|
| 1 | EE | N. Kaushik,
A. Kranti,
Mridula Gupta,
R. S. Gupta:
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor.
Microelectronics Journal 34(1): 77-83 (2003) |
