| |
| 2006 | ||
|---|---|---|
| 1 | EE | L. Harmatha, M. Tapajna, V. Slugen, P. Ballo, P. Písecný, J. Sik, G. Kögel: Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. Microelectronics Journal 37(4): 283-289 (2006) |
| 1 | L. Harmatha | [1] |
| 2 | G. Kögel | [1] |
| 3 | P. Písecný | [1] |
| 4 | J. Sik | [1] |
| 5 | V. Slugen | [1] |
| 6 | M. Tapajna | [1] |