| |
| 2006 | ||
|---|---|---|
| 3 | EE | M. Idrissi-Benzohra, M. Abdelaoui, M. Benzohra: Effect of a magnetic field on the conduction mechanism in Silicon P+N junctions. Microelectronics Journal 37(2): 127-132 (2006) |
| 2003 | ||
| 2 | EE | M. Abdelaoui, M. Idrissi-Benzohra, M. Lamine, M. Benzohra: Electrical characterization and modelling of high energy pre-amorphized P+N silicon junctions. Microelectronics Journal 34(10): 955-959 (2003) |
| 1 | EE | M. Abdelaoui, M. Idrissi-Benzohra, H. Mehor, M. Benzohra, F. Olivié: Electrical characterizations of preamorphized junctions under LF magnetic field. Microelectronics Journal 34(11): 1059-1066 (2003) |
| 1 | M. Benzohra | [1] [2] [3] |
| 2 | M. Idrissi-Benzohra | [1] [2] [3] |
| 3 | M. Lamine | [2] |
| 4 | H. Mehor | [1] |
| 5 | F. Olivié | [1] |